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Debra Vogler of Solid State Technology interviews Lars Liebmann, Distinguished Engineer, Design for Manufacturability at IBM, at the 2008 SPIE Advanced Lithography Conference.; 193nm lithography; Extreme Ultraviolet (EUV); high-index immersion lithography; meeting overlay tolerances; SST on the Scene at SPIE; 22nm; nanoimprint lithography (NIL); solid state technology; Lithography; CMOS manufacturing; double patterning; Debra Vogler of Solid State Technology interviews Benjamin Eynon, Associate Director of Lithography, and Samsung assignee to SEMATECH, at the 2008 SPIE Advanced Lithography Conference. ; 193nm lithography; Extreme Ultraviolet (EUV); high-index immersion lithography; meeting overlay tolerances; SST on the Scene at SPIE; 22nm; nanoimprint lithography (NIL); solid state technology; Lithography; CMOS manufacturing; double patterning; Debra Vogler of Solid State Technology interviews Mireille Maenhoudt, Litho Process Development Group Manager at IMEC, at the 2008 SPIE Advanced Lithography Conference.; 193nm lithography; Extreme Ultraviolet (EUV); high-index immersion lithography; meeting overlay tolerances; SST on the Scene at SPIE; 22nm; nanoimprint lithography (NIL); solid state technology; Lithography; CMOS manufacturing; double patterning; Debra Vogler of Solid State Technology interviews Franklin Kalk, CTO at Toppan Photomasks, at the 2008 SPIE Advanced Lithography Conference.; 193nm lithography; Extreme Ultraviolet (EUV); high-index immersion lithography; meeting overlay tolerances; SST on the Scene at SPIE; 22nm; nanoimprint lithography (NIL); solid state technology; Lithography; CMOS manufacturing; double patterning; Debra Vogler of Solid State Technology interviews John Sturtevant, RET Technology Support Manager at Mentor Graphics, at the 2008 SPIE Advanced Lithography Conference.; 193nm lithography; Extreme Ultraviolet (EUV); high-index immersion lithography; meeting overlay tolerances; SST on the Scene at SPIE; 22nm; nanoimprint lithography (NIL); solid state technology; Lithography; CMOS manufacturing; double patterning; Debra Vogler of Solid State Technology interviews Christopher Sparkes, Sr. Director of Technology at Nikon Precision, at the 2008 SPIE Advanced Lithography Conference.; 193nm lithography; Extreme Ultraviolet (EUV); high-index immersion lithography; meeting overlay tolerances; SST on the Scene at SPIE; 22nm; nanoimprint lithography (NIL); solid state technology; Lithography; CMOS manufacturing; double patterning; Debra Vogler of Solid State Technology interviews Harry Levinson, Manager of Strategic Lithography Technology and Sr. Fellow at AMD, at the 2008 SPIE Advanced Lithography Conference.; 193nm lithography; Extreme Ultraviolet (EUV); high-index immersion lithography; meeting overlay tolerances; SST on the Scene at SPIE; 22nm; nanoimprint lithography (NIL); solid state technology; Lithography; CMOS manufacturing; double patterning; Debra Vogler of Solid State Technology interviews Griff Resor, President of Resor Associates, at the 2008 SPIE Advanced Lithography Conference.; 193nm lithography; Extreme Ultraviolet (EUV); high-index immersion lithography; meeting overlay tolerances; SST on the Scene at SPIE; 22nm; nanoimprint lithography (NIL); solid state technology; Lithography; CMOS manufacturing; double patterning; Debra Vogler of Solid State Technology interviews Stefan Wurm, Program Manager, EUV Strategy at SEMATECH, at the 2008 SPIE Advanced Lithography Conference.; 193nm lithography; Extreme Ultraviolet (EUV); high-index immersion lithography; meeting overlay tolerances; SST on the Scene at SPIE; 22nm; nanoimprint lithography (NIL); solid state technology; Lithography; CMOS manufacturing; double patterning; Debra Vogler of Solid State Technology interviews Kurt Ronse, Director of Lithography at IMEC, at the 2008 SPIE Advanced Lithography Conference.; 193nm lithography; Extreme Ultraviolet (EUV); high-index immersion lithography; meeting overlay tolerances; SST on the Scene at SPIE; 22nm; nanoimprint lithography (NIL); solid state technology; Lithography; CMOS manufacturing; double patterning; Debra Vogler of Solid State Technology interviews Mark Melliar-Smith, CEO of Molecular Imprints, at the 2008 SPIE Advanced Lithography Conference.; 193nm lithography; Extreme Ultraviolet (EUV); high-index immersion lithography; meeting overlay tolerances; SST on the Scene at SPIE; 22nm; nanoimprint lithography (NIL); solid state technology; Lithography; CMOS manufacturing; double patterning; Debra Vogler of Solid State Technology interviews J. Tracy Weed, Director, Director, Manufacturing Products Group, at Synopsys, at the 2008 SPIE Advanced Lithography Conference.; 193nm lithography; Extreme Ultraviolet (EUV); high-index immersion lithography; meeting overlay tolerances; SST on the Scene at SPIE; 22nm; nanoimprint lithography (NIL); solid state technology; Lithography; CMOS manufacturing; double patterning; Shortly after the Praxair Electronics Technology Forum, John Borland, founder and president of J.O.B. technologies, discusses areas of contention facing IC manufacturers as they go from 45nm to 32nm.; 32nm; Semicon West 2007; high-K metal gates; J.O.B. Technologies; 45nm; IC manufacturing; praxair; process variability; annealing; Following the Praxair ElectronicTechnology Forum, Raj Jammy, director front end processes for SEMATECH/IBM assignee, discusses how IC manufacturers are pursuing solutions for controlling process variability, high-k/metal gates, and annealing.; 32nm; SEMATECH; Semicon West 2007; high-K metal gates; ibm; 45nm; sst; SST on the Scene; praxair; annealing; Cynthia Hoover, Director of Electronics R&D for Praxair Inc. discusses contentions facing IC manufacturers as they go from 45 nm to 32nm.; IC manufacture; sst; solid state technology; high-K metal gates; 65nm; SST on the Scene; 45nm; annealing; Ed Korczynski, Senior Technical Editor for Solid State Technology discusses contentions facing IC manufacturers as they go from 45 nm to 32nm.; IC manufacture; sst; solid state technology; high-K metal gates; 65nm; SST on the Scene; 45nm; praxair; annealing; Paul Gilman, director of Technology Deposition Materials for Praxair Electronics discusses contentions facing IC manufacturers as they go from 45 nm to 32nm.; IC manufacture; sst; solid state technology; high-K metal gates; 65nm; SST on the Scene; 45nm; praxair; annealing; David Gross, Global Manufacturing Systems Technology, 300 mm engineering, AMD discusses contentions facing IC manufacturers as they go from 45 nm to 32nm.; IC manufacture; Global Manufacturing Systems Technology; sst; solid state technology; high-K metal gates; 65nm; SST on the Scene; 45nm; annealing; John Allgair, Metrology Program Manager, AMD assignee to the International SEMATECH Maufacturing Initiative discusses contentions facing IC manufacturers as they go from 45 nm to 32nm.; IC manufacture; sst; solid state technology; high-K metal gates; 65nm; SST on the Scene; 45nm; International SEMATECH Manufacturing Initiative; annealing; Alain Diebold, Empire Innovation Professor of Nanoscale Science, College of Nanoscale Science and Engineering, University at Albany discusses contentions facing IC manufacturers as they go from 45 nm to 32nm.; University at Albany; high-K metal gates; nanoscale science; 45nm; IC manufacture; sst; solid state technology; College of Nanoscale Science and Engineering; 65nm; SST on the Scene; annealing; Ludo Deferm, VP, Business Development, IMEC discusses contentions facing IC manufacturers as they go from 45 nm to 32nm.; IC manufacture; sst; solid state technology; high-K metal gates; 65nm; SST on the Scene; 45nm; IMEC; annealing; Larry Larson, Front End Associate Director, SEMATECH discusses contentions facing IC manufacturers as they go from 45 nm to 32nm.; IC manufacture; SEMATECH; sst; solid state technology; high-K metal gates; 65nm; SST on the Scene; 45nm; annealing; Franklin Kalk, CTO, Toppan Photomasks discusses how the industry is finding ways to extend 193nm immersion such that many anticipate its use in volume manufacturing below 65nm half-pitch.; fluid materials; immersion lithography; SPIE 2007 Advanced Lithography Conference; 193nm; EUV; 655nm; high-index lens; Society of Photographic Instrumentation Engineers; advanced lithography; SST on the Scene; double-patterning immersion; 32nm half-pitch; Toppan Photomasks; NA immersion; Harry Levinson, Manager of Strategic Lithography Technology & AMD Fellow discusses ways the industry is extending 193nm immersion such that many anticipate its use in volume manufacturing below 65nm half-pitch. ; fluid materials; immersion lithography; SPIE 2007 Advanced Lithography Conference; 193nm; EUV; 655nm; high-index lens; Society of Photographic Instrumentation Engineers; advanced lithography; SST on the Scene; double-patterning immersion; Strategic Lithography Technology; 32nm half-pitch; NA immersion; Paul van Attekum, SVP & Business Unit Manager, Incubator Products ASML discusses ways the industry is extending 193nm immersion such that many anticipate its use in volume manufacturing below 65nm half-pitch. ; immersion lithography; fluid materials; SPIE 2007 Advanced Lithography Conference; 193nm; EUV; 655nm; Incubator Products; high-index lens; Society of Photographic Instrumentation Engineers; advanced lithography; SST on the Scene; double-patterning immersion; 32nm half-pitch; NA immersion; Bob Akins, Co-founder, Chairman, CEO, Cymer discusses ways the industry is extending 193nm immersion such that many anticipate its use in volume manufacturing below 65nm half-pitch.; immersion lithography; fluid materials; SPIE 2007 Advanced Lithography Conference; 193nm; EUV; 655nm; high-index lens; Society of Photographic Instrumentation Engineers; advanced lithography; SST on the Scene; double-patterning immersion; 32nm half-pitch; NA immersion; Cymer; Bob Naber, Product Marketing Director of RET Solutions, Cadence Design Systems discusses ways the industry is extending 193nm immersion such that many anticipate its use in volume manufacturing below 65nm half-pitch.; immersion lithography; fluid materials; SPIE 2007 Advanced Lithography Conference; 193nm; EUV; 655nm; Cadence Design Systems; high-index lens; Society of Photographic Instrumentation Engineers; advanced lithography; SST on the Scene; double-patterning immersion; 32nm half-pitch; NA immersion; Kurt Ronse, Director of Lithography, IMEC discusses ways the industry is extending 193nm immersion such that many anticipate its use in volume manufacturing below 65nm half-pitch.; fluid materials; immersion lithography; SPIE 2007 Advanced Lithography Conference; IMEC; 193nm; EUV; 655nm; high-index lens; Society of Photographic Instrumentation Engineers; advanced lithography; SST on the Scene; double-patterning immersion; 32nm half-pitch; NA immersion; Testing 16:9 apsect ratio; Lars Liebmann, Distinguished Engineer, Design for Manufacturability, IBM discusses challenges that DFM solutions will have to meet as the industry moves from 65nm to 45nm and beyond.; SPIE 2007 Advanced Lithography Conference; water immersion exposure; 93nm; ibm; 45nm; electronic imaging; Society of Photographic Instrumentation Engineers; DFM; advanced lithography; 65nm; SST on the Scene; Hans Stork, SVP, CTO TI discusses challenges that DFM solutions will have to meet as the industry moves from 65nm to 45nm and beyond.; SPIE 2007 Advanced Lithography Conference; CTO TI; water immersion exposure; 93nm; 45nm; electronic imaging; Society of Photographic Instrumentation Engineers; DFM; advanced lithography; 65nm; SST on the Scene; John Sturtevant, RET Technology Support Manager, Mentor Graphics discusses challenges that DFM solutions will have to meet as the industry moves from 65nm to 45nm and beyond.; SPIE 2007 Advanced Lithography Conference; water immersion exposure; 93nm; 45nm; electronic imaging; Society of Photographic Instrumentation Engineers; DFM; advanced lithography; 65nm; SST on the Scene; Mentor Graphics; Michael Lercel, Lithography Director at SEMATCH (IBM assignee), discusses challenges that DFM solutions will have to meet as the industry moves from 65nm to 45nm and beyond.; SPIE 2007; water immersion exposure; 45nm; 193nm; electronic imaging; Society of Photographic Instrumentation Engineers; DFM; advanced lithography; 65nm; SST on the Scene; Gary Smith, Chief Analyst, Gary Smith EDA discusses challenges that DFM solutions will have to meet as the industry moves from 65nm to 45nm and beyond.; SPIE 2007 Advanced Lithography Conference; water immersion exposure; 93nm; Gary Smith EDA; 45nm; electronic imaging; Society of Photographic Instrumentation Engineers; DFM; advanced lithography; 65nm; SST on the Scene; Axel Nackaerts, Senior Engineer, IMEC discusses challenges that DFM solutions will have to meet as the industry moves from 65nm to 45nm and beyond.; SPIE 2007 Advanced Lithography Conference; water immersion exposure; 93nm; 45nm; IMEC; electronic imaging; Society of Photographic Instrumentation Engineers; DFM; advanced lithography; 65nm; SST on the Scene; Anantha Sethuraman, VP, Design for Manufacturing, Synopsys, Inc. talks to SST about the next 10 years: cost-effective lithography, managing R&D costs, scheduling invention, transitioning to 450nm wafers, and new business models.; Synopsys Inc.; e-beam direct write lithography; 450 nm wafers; raw polysilicon; Finishing fabs; André-Jacques Auberton-Hervé, President, CEO and Chairman of the Board, Soitec talks to SST about the next 10 years: cost-effective lithography, managing R&D costs, scheduling invention, transitioning to 450nm wafers, and new business models.; Soitec; e-beam direct write lithography; 450 nm wafers; raw polysilicon; Finishing fabs; David L. Dutton, CEO, Mattson Technology talks to SST about the next 10 years: cost-effective lithography, managing R&D costs, scheduling invention, transitioning to 450nm wafers, and new business models.; Mattson Technology; e-beam direct write lithography; 450 nm wafers; raw polysilicon; Finishing fabs; David Lam, Chairman, David Lam Group talks to SST about the next 10 years: cost-effective lithography, managing R&D costs, scheduling invention, transitioning to 450nm wafers, and new business models.; David Lam Group; e-beam direct write lithography; 450 nm wafers; raw polysilicon; Finishing fabs; Francois J. Henley, President and CEO, Silicon Genesis talks to SST about the next 10 years: cost-effective lithography, managing R&D costs, scheduling invention, transitioning to 450nm wafers, and new business models.; e-beam direct write lithography; 450 nm wafers; raw polysilicon; Finishing fabs; Silicon Genesis; John Ogawa Borland, Founder, J.O.B. Technologies talks to SST about the next 10 years: cost-effective lithography, managing R&D costs, scheduling invention, transitioning to 450nm wafers, and new business models.; J.O.B. Technologies; e-beam direct write lithography; 450 nm wafers; raw polysilicon; Finishing fabs; Kevin P. Fahey, GM NanoElectronics Fab Division, FEI Company talks to SST about the next 10 years: cost-effective lithography, managing R&D costs, scheduling invention, transitioning to 450nm wafers, and new business models.; FEI Company; e-beam direct write lithography; 450 nm wafers; raw polysilicon; Finishing fabs; Kurt Lackenbucher, EVP & COO, SEZ talks to SST about the next 10 years: cost-effective lithography, managing R&D costs, scheduling invention, transitioning to 450nm wafers, and new business models.; SEZ; e-beam direct write lithography; 450 nm wafers; raw polysilicon; Finishing fabs; Ludo Deferm, VP of Business Development, IMEC talks to SST about the next 10 years: cost-effective lithography, managing R&D costs, scheduling invention, transitioning to 450nm wafers, and new business models.; IMECH; e-beam direct write lithography; 450 nm wafers; raw polysilicon; Finishing fabs; Mark Namaroff, Sr. VP of Marketing, Axcelis Technologies talks to SST about the next 10 years: cost-effective lithography, managing R&D costs, scheduling invention, transitioning to 450nm wafers, and new business models.; e-beam direct write lithography; 450 nm wafers; raw polysilicon; Finishing fabs; Axcelis Technologies; Martin van den Brink, EVP Marketing & Technology, ASML talks to SST about the next 10 years: cost-effective lithography, managing R&D costs, scheduling invention, transitioning to 450nm wafers, and new business models.; ASML; e-beam direct write lithography; 450 nm wafers; raw polysilicon; Finishing fabs; Sasson Somekh, President, Novellus Systems talks to SST about the next 10 years: cost-effective lithography, managing R&D costs, scheduling invention, transitioning to 450nm wafers, and new business models.; Novellus Systems; e-beam direct write lithography; 450 nm wafers; raw polysilicon; Finishing fabs; Scott Kramer, Director of ISMI, SEMATECH talks to SST about the next 10 years: cost-effective lithography, managing R&D costs, scheduling invention, transitioning to 450nm wafers, and new business models.; SEMATECH; e-beam direct write lithography; 450 nm wafers; raw polysilicon; Finishing fabs; Ted Vucurevich, Sr. VP, CTO, Advanced R&D, Cadence Design Systems, Inc. talks to SST about the next 10 years: cost-effective lithography, managing R&D costs, scheduling invention, transitioning to 450nm wafers, and new business models.; Cadence Design Systems; 450 nm wafers; raw polysilicon; Inc.; e-beam direct write lithography; Finishing fabs; Aida Jebens, Senior Economist at VLSI Research, reviewed her firm's industry weather forecast, which shows a "cooling" and cloudy outlook for display equipment and "flat" for chip tools, though next year's forecast looks to be improved.; 450 mm; VLSI research; wafer news; wafer size transistion; Semicon; Andrew Grenville, associate director of lithography and Intel assignee to SEMATECH, anticipates that there will be enough data by the end of 2007 to be able to make an assessment on the viability of EUV for 32nm half-pitch. ; EUV has some big hurdles to overcome, according to Griff Resor, president of Resor Associates, who says that "for people on the two-year cycle, it's going to be late."; David Gross, Global Manufacturing Systems Technology, 300 mm engineering, AMD discusses contentions facing IC manufacturers as they go from 45 nm to 32nm.; IC manufacture; Global Manufacturing Systems Technology; sst; solid state technology; high-K metal gates; 65nm; SST on the Scene; 45nm; annealing; Alain Diebold, Empire Innovation Professor of Nanoscale Science, College of Nanoscale Science and Engineering, University at Albany discusses contentions facing IC manufacturers as they go from 45 nm to 32nm.; University at Albany; high-K metal gates; nanoscale science; 45nm; IC manufacture; sst; solid state technology; College of Nanoscale Science and Engineering; 65nm; SST on the Scene; annealing; Bob Naber, Product Marketing Director of RET Solutions, Cadence Design Systems discusses ways the industry is extending 193nm immersion such that many anticipate its use in volume manufacturing below 65nm half-pitch.; immersion lithography; fluid materials; SPIE 2007 Advanced Lithography Conference; 193nm; EUV; 655nm; Cadence Design Systems; high-index lens; Society of Photographic Instrumentation Engineers; advanced lithography; SST on the Scene; double-patterning immersion; 32nm half-pitch; NA immersion; Paul van Attekum, SVP & Business Unit Manager, Incubator Products ASML discusses ways the industry is extending 193nm immersion such that many anticipate its use in volume manufacturing below 65nm half-pitch. ; immersion lithography; fluid materials; SPIE 2007 Advanced Lithography Conference; 193nm; EUV; 655nm; Incubator Products; high-index lens; Society of Photographic Instrumentation Engineers; advanced lithography; SST on the Scene; double-patterning immersion; 32nm half-pitch; NA immersion; Kevin P. Fahey, GM NanoElectronics Fab Division, FEI Company talks to SST about the next 10 years: cost-effective lithography, managing R&D costs, scheduling invention, transitioning to 450nm wafers, and new business models.; FEI Company; e-beam direct write lithography; 450 nm wafers; raw polysilicon; Finishing fabs; David L. Dutton, CEO, Mattson Technology talks to SST about the next 10 years: cost-effective lithography, managing R&D costs, scheduling invention, transitioning to 450nm wafers, and new business models.; Mattson Technology; e-beam direct write lithography; 450 nm wafers; raw polysilicon; Finishing fabs; Scott Kramer, Director of ISMI, SEMATECH talks to SST about the next 10 years: cost-effective lithography, managing R&D costs, scheduling invention, transitioning to 450nm wafers, and new business models.; SEMATECH; e-beam direct write lithography; 450 nm wafers; raw polysilicon; Finishing fabs; David Lam, Chairman, David Lam Group talks to SST about the next 10 years: cost-effective lithography, managing R&D costs, scheduling invention, transitioning to 450nm wafers, and new business models.; David Lam Group; e-beam direct write lithography; 450 nm wafers; raw polysilicon; Finishing fabs; Debra Vogler, Sr. Technical Editor for Solid State Technology, covers events and interview presenters and panelists for Solid State Technology¿s video interview program, SST On the Scene.