Despite engineering and cost challenges, 32nm node IC manufacturing within reach
There are no insurmountable obstacles foreseen for scaling high-volume manufacturing to the 32nm node for logic in 2009.
System-in-package integration of passives using 3D through-silicon vias
Future generations of cellular RF transceivers require higher degrees of integration, preferably using the third dimension.
Fully gate-all-around silicon nanowire CMOS devices
Although CVD-grown nanowires are good for demonstration purposes, getting them into manufacturing calls for the utilization of CMOS fabrication methods.
Lithography’s future: tougher than ever
The industry struggle from node to node along the semi-log Moore’s Law track gets ever tougher.
Business Trends
Worries about a looming US economic recession and unexpected softness in the memory sector (particularly NAND) are already causing semiconductor watchers to rethink their expectations for the IC indus ...
Etching new IC materials at 32nm and 22nm
Silicon Valley was once the center of the silicon-based IC manufacturing world, and although IC fabs are now located globally, the valley maintains momentum as the center of IC R&D.
Submicron micromachining technology for liquid phase chromatography separation
Liquid phase chromatography is undoubtedly the most powerful technique to separate and identify molecules present in a given sample mixture.
Product News
The VMP electronic variable displacement metering pump dispenses UV-sensitive fluids such as UV-curable adhesives, UV coatings, and photolithography chemicals.
Product Focus Wafer Processing
These sputtering targets are available in 62 different metals and alloys, as well as compounds such as borides, carbides, fluorides, nitrides, oxides, selenides, silicides, sulphides, and tellurides.
Two keys that unlock 45nm OPC
Stepping into the sub-180nm world creates a new reality far different from what we have known and relied on in the past.