High-volume manufacturing requirements drive EUV source development
Extreme-ultraviolet (EUV) light source development has regularly been characterized as one of the critical issues facing the viability of EUV lithography.
Plasma sources for high-rate etching of SiC
SiC has become an attractive material for the semiconductor industry for both electronic devices and microelectromechanical systems (MEMS).
Controlling CMP by optically monitoring wafer stresses
The application of a new coherent gradient sensing interferometer that characterizes single- and double-layer copper damascene processing of 200 and 300mm wafers - using low-k dielectric films - is de ...
Chamber matching and on-tool MFC adjustment achieve process repeatability
To ensure process transparency when replacing mass flow controllers (MFC) or when employing new types of MFCs in a particular process, it is often desired to have the flow rate of the replacement unit ...
Single-wafer polymer removal on DRAM structures using inorganic chemicals
A collaborative effort between a memory manufacturer and a semiconductor tool supplier focuses on optimizing inorganic chemicals for polymer removal from DRAM device structures using single-wafer spin ...
The changing concept of ‘adding value’
There are many ways to “add value” to an enterprise. As companies grow, and industries and technologies mature, the focus may shift dramatically.
Gaining synergy with strained silicon
Strained silicon is one of the key technology boosters identified by the International Technology Roadmap for Semiconductors (ITRS) as being essential to the continuation of classical scaling.
Material challenges for silicon nanoelectronics
IC manufacturing technology entered the era of nanotechnology in 2000, when circuits were produced with a minimum feature size <100nm.
Standard Si processes drive economies of scale
Solid State Technology invited executives from the compound semiconductor and MEMS industries to discuss how they are benefiting from economies of scale simil ...