Recent Features
- integrated ODP metrology with floating n&k’s 06/01/2009
- Engineered to the task: why camera-phone cameras are different 06/01/2009
- Thin films for 3D: ALD for non-planar topographies 06/01/2009
- Combined reflectometry-ellipsometry technique to measure graphite down to monolayer thickness 06/01/2009
- Memory sector ready to rebound? Not quite 06/01/2009
Recent Products
- Centura Enabler E5 01/01/2009
- Enviro Xceed400 01/01/2009
- NT series of aligners and measurement systems 01/01/2009
- V6000 01/01/2009
- 655D CVD 01/01/2009
Featured Product
Date: April, 2008
Computational litho platform and advanced DPT solution
The Tachyon 2.5 computational lithography platform and the Tachyon DPT, an advanced double patterning technology (DPT) solution, have been introduced. The DPT allows chipmakers to meet the low k1 requirements for memory and logic devices at 32nm and below using advanced lithography systems. Tachyon 2.5’s combination of enhanced system and firmware advancements, together with faster processors, continues to meet the industry’s need for greater computational power, supporting the rapid adoption of DPT and other low k1 resolution enhancement technologies. Tachyon 2.5 reportedly provides up to 150% (2.5× faster) greater performance than previous Tachyon systems with minimal increase in IT infrastructure costs. Tachyon DPT uses Brion’s latest DPT to allow advanced chipmakers to develop devices down to the 22nm technology node. This production-ready, complete end-to-end solution supports both litho- (litho-etch-litho-etch) and spacer-DPT. Tachyon DPT offers full-chip, conflict-free pattern split, model-based OPC, model-based stitching compensation, and automatic density balancing. Brion Technologies, an ASML company, Santa Clara, CA USA; www.brion.com.
Next-generation vacuum pump
The iXH series of harsh process vacuum pump products are designed to meet the increasing demands of the emerging processes required for manufacturing at 60nm and smaller design rules. The iXH reportedly helps reduce tool cost-of-ownership, offers a smaller footprint than previous generations, and features a modular design that enables a quicker response to emerging process requirements. Unlike earlier process technologies that deposited up to 90% of the precurser on the wafer, ALD processes generally deposit <10%, dramatically increasing potential deposition in the pumps. To manage these conditions, the iXH features improved thermal control and increased torque. It is also good for extreme powder processes with TEOS flows above 5 g/min, featuring large exhaust stages and the Gas Buster inlet purge to deal with the process byproducts and minimize system maintenance. Edwards Vacuum, Crawley, West Sussex, UK; www.edwardsvacuum.com.
Imprint lithography tool
The Imprio 300 imprint litho tool incorporates improvements in automation, tool throughput, and overlay performance for IC prototyping and process development at the 32nm node and beyond. The tool leverages S-FIL (step and flash imprint lithography) technology and offers sub-10nm resolution patterning in a single exposure using a simplified design and process. As a result, the system provides a highly extendible, low-CoO patterning solution for multiple design generations. The ability of the Imprio 300 to create dense, high-resolution structures in 2D makes it well suited for memory applications, where density is paramount. Compared to the previous-generation Imprio 250 system, throughput on the Imprio 300 has been increased by 250%, further reducing the CoO of imprint lithography to levels consistent with 193nm immersion, and less than EUV lithography. Overlay performance has been improved with the ability to provide sub-10nm overlay in test devices. Molecular Imprints Inc., Austin, TX USA; www.molecularimprints.com.
Optical scatterometry/thin film metrology system
The Gemini optical scatterometry/thin film metrology system for photomasks features twin 50µm spots: one for reflectance (R) and one for transmittance (T). Both R and T are measured simultaneously. The transmittance component of the photomask measurements enhances the capability to measure trench depths, CDs, and profiles of complex 2D and 3D structures. Other key attributes of the system include measurements on the active device area, measurements of non-periodic structures, through pellicle measurements of photomasks, and automated flipper for backside measurements of masks with a Cr layer present (for example: PR/CrOx/Cr/MoSi on quartz). n&k Technology, San Jose, CA USA; www.nandk.com


