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Features / Implant P1

32nm node USJ formation using rapid process optimization metrology
Jul 01 -- Ultra-shallow junctions (USJs) that are <10nm at the 32nm node require the close process optimization of ion implantation (elemental species, energy and dose) with diffusion-less annealing (millisecond and spike combination) in order to reduce device variation and achieve “high-quality” junctions....
 
 

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